Exploiting zirconium nitride for an efficient heat-resistant absorber and emitter pair for solar thermophotovoltaic systems

Sumbel Ijaz; Ahsan Sarwar Rana; Zubair Ahmad; Bacha Rehman; Muhammad Zubair; Muhammad Qasim Mehmood

doi:10.1364/OE.438899

Exploiting zirconium nitride for an efficient heat-resistant absorber and emitter pair for solar thermophotovoltaic systems

Sumbel Ijaz
, Ahsan Sarwar Rana
, Zubair Ahmad
, Bacha Rehman
, Muhammad Zubair
, Muhammad Qasim Mehmood

Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A perfect absorber in the visible-infrared regime maintaining its performance at elevated temperatures and under a harsh environment is needed for energy harvesting using solar-thermophotovoltaic (STPV) systems. A near-perfect metasurface absorber based on lossy refractory metal nitride, zirconium-nitride (ZrN), having a melting-point of 2,980°C, is presented. The numerically proposed design with metal-insulator-metal configuration exhibits an average of > 95% for 400-800 nm and 86% for 280-2200 nm. High absorption is attributed to magnetic resonance leading to free-space impedance matching. The subwavelength structure is polarization- and angle-insensitive and is highly tolerant to fabrication imperfections. An emitter is optimized for bandgap energy ranging from 0.7 eV-1.9 eV.

Original language	English
Pages (from-to)	31537-31548
Number of pages	12
Journal	Optics Express
Volume	29
Issue number	20
DOIs	https://doi.org/10.1364/OE.438899
Publication status	Published - 27 Sept 2021

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10.1364/OE.438899

Cite this

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title = "Exploiting zirconium nitride for an efficient heat-resistant absorber and emitter pair for solar thermophotovoltaic systems",

abstract = "A perfect absorber in the visible-infrared regime maintaining its performance at elevated temperatures and under a harsh environment is needed for energy harvesting using solar-thermophotovoltaic (STPV) systems. A near-perfect metasurface absorber based on lossy refractory metal nitride, zirconium-nitride (ZrN), having a melting-point of 2,980°C, is presented. The numerically proposed design with metal-insulator-metal configuration exhibits an average of > 95\% for 400-800 nm and 86\% for 280-2200 nm. High absorption is attributed to magnetic resonance leading to free-space impedance matching. The subwavelength structure is polarization- and angle-insensitive and is highly tolerant to fabrication imperfections. An emitter is optimized for bandgap energy ranging from 0.7 eV-1.9 eV.",

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T1 - Exploiting zirconium nitride for an efficient heat-resistant absorber and emitter pair for solar thermophotovoltaic systems

AU - Ijaz, Sumbel

AU - Rana, Ahsan Sarwar

AU - Ahmad, Zubair

AU - Rehman, Bacha

AU - Zubair, Muhammad

AU - Mehmood, Muhammad Qasim

PY - 2021/9/27

Y1 - 2021/9/27

N2 - A perfect absorber in the visible-infrared regime maintaining its performance at elevated temperatures and under a harsh environment is needed for energy harvesting using solar-thermophotovoltaic (STPV) systems. A near-perfect metasurface absorber based on lossy refractory metal nitride, zirconium-nitride (ZrN), having a melting-point of 2,980°C, is presented. The numerically proposed design with metal-insulator-metal configuration exhibits an average of > 95% for 400-800 nm and 86% for 280-2200 nm. High absorption is attributed to magnetic resonance leading to free-space impedance matching. The subwavelength structure is polarization- and angle-insensitive and is highly tolerant to fabrication imperfections. An emitter is optimized for bandgap energy ranging from 0.7 eV-1.9 eV.

AB - A perfect absorber in the visible-infrared regime maintaining its performance at elevated temperatures and under a harsh environment is needed for energy harvesting using solar-thermophotovoltaic (STPV) systems. A near-perfect metasurface absorber based on lossy refractory metal nitride, zirconium-nitride (ZrN), having a melting-point of 2,980°C, is presented. The numerically proposed design with metal-insulator-metal configuration exhibits an average of > 95% for 400-800 nm and 86% for 280-2200 nm. High absorption is attributed to magnetic resonance leading to free-space impedance matching. The subwavelength structure is polarization- and angle-insensitive and is highly tolerant to fabrication imperfections. An emitter is optimized for bandgap energy ranging from 0.7 eV-1.9 eV.

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DO - 10.1364/OE.438899

M3 - Article

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